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The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.
High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.
When a magnetic field is applied to a type-II superconductor, it penetrates the superconductor in a thin cylindrical line known as a vortex line. Traditional methods to manipulate these vortices are limited in precision and affect a broad area.
Molecular Beam Epitaxy is a traditional technique for the synthesis of thin film materials used in the semiconducting and microelectronics industry. In its essence, the MBE technique heats crucibles filled with ultra-pure atomic elements under ultra high vacuum condition
The technology describes an electron beam in a storage ring as a quantum computer.
This invention presents technologies for characterizing physical properties of a sample's surface by combining image processing with machine learning techniques.
This invention introduces a system for microscopy called pan-sharpening, enabling the generation of images with both full-spatial and full-spectral resolution without needing to capture the entire dataset, significantly reducing data acquisition time.