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This invention addresses a key challenge in quantum communication networks by developing a controlled-NOT (CNOT) gate that operates between two degrees of freedom (DoFs) within a single photon: polarization and frequency.

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High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.

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An ORNL invention proposes using 3D printing to make conductors with space-filling thin-wall cross sections. Space-filling thin-wall profiles will maximize the conductor volume while restricting the path for eddy currents induction.