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The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.
High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.
This invention presents technologies for characterizing physical properties of a sample's surface by combining image processing with machine learning techniques.
This technology is a strategy for decreasing electromagnetic interference and boosting signal fidelity for low signal-to-noise sensors transmitting over long distances in extreme environments, such as nuclear energy generation applications, particularly for particle detection.
This invention introduces a system for microscopy called pan-sharpening, enabling the generation of images with both full-spatial and full-spectral resolution without needing to capture the entire dataset, significantly reducing data acquisition time.