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Researcher
- Amit Shyam
- Beth L Armstrong
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- Khryslyn G Araño
- Liam Collins
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- Marm Dixit
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- Matthew S Chambers
- Maxim A Ziatdinov
- Michael Kirka
- Nancy Dudney
- Neus Domingo Marimon
- Nicholas Richter
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- Ondrej Dyck
- Peter Wang
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- Priyanshi Agrawal
- Roger G Miller
- Rose Montgomery
- Saban Hus
- Sarah Graham
- Sergiy Kalnaus
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- Yongtao Liu
- Yukinori Yamamoto
- Yutai Kato

Often there are major challenges in developing diverse and complex human mobility metrics systematically and quickly.

A finite element approach integrated with a novel constitute model to predict phase change, residual stresses and part deformation.

Understanding building height is imperative to the overall study of energy efficiency, population distribution, urban morphologies, emergency response, among others. Currently, existing approaches for modelling building height at scale are hindered by two pervasive issues.

Currently available cast Al alloys are not suitable for various high-performance conductor applications, such as rotor, inverter, windings, busbar, heat exchangers/sinks, etc.

The invented alloys are a new family of Al-Mg alloys. This new family of Al-based alloys demonstrate an excellent ductility (10 ± 2 % elongation) despite the high content of impurities commonly observed in recycled aluminum.

The lack of real-time insights into how materials evolve during laser powder bed fusion has limited the adoption by inhibiting part qualification. The developed approach provides key data needed to fabricate born qualified parts.

A new nanostructured bainitic steel with accelerated kinetics for bainite formation at 200 C was designed using a coupled CALPHAD, machine learning, and data mining approach.

The invention introduces a novel, customizable method to create, manipulate, and erase polar topological structures in ferroelectric materials using atomic force microscopy.

High coercive fields prevalent in wurtzite ferroelectrics present a significant challenge, as they hinder efficient polarization switching, which is essential for microelectronic applications.